发明名称 TUNNELING MAGNETORESISTANCE EFFECT DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To overcome the problem such that a reproduced waveform is unstable with a conventional tunneling magnetoresistance effect device and magnetic elements cannot be manufactured with good reproducibility. SOLUTION: An insulating layer 31 is formed on both sides of a multilayer film 21 and a bias layer 33 is so formed as to contact at least a part of end surfaces on both surfaces of a free magnetic layer 30. The bias layer 33 extends on the upper surface of the multilayer film 21. With this configuration, a sense current from electrode layers 20 and 34 appropriately flows in the multilayer film 21 while a bias magnetic field from the bias layer 33 is supplied from the end surfaces on both sides of the free magnetic layer 30. Further, the magnetic domain structure of the free magnetic layer 30 is stabilized for stably reproduced waveform and reduced Barkhausen noise.
申请公布号 JP2002033532(A) 申请公布日期 2002.01.31
申请号 JP20000216347 申请日期 2000.07.17
申请人 ALPS ELECTRIC CO LTD 发明人 HASEGAWA NAOYA
分类号 G11B5/39;G11B5/31;H01F10/14;H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G11B5/39
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