| 摘要 |
There is provided a metrologic methodology, useful for in-situ, non-destructive monitoring, comprising a combination of novel signal generation and analysis techniques, computational techniques, and laser infrared radiometric instrumental configurations for measuring thermal and electronic properties of industrial semiconductor wafers and non-electronic materials. This methodology includes: the combination of the frequency sweep (Chirp) and conventional frequency scan techniques for rapid measurement of electronic and thermal transport properties of semiconductor and engineering materials/devices. The common-mode rejection demodulation (bi-modal pulse) method for detection of very weak inhomogeneities in materials, based on generating a real time periodic waveform consisting of two incident square-wave pulses. The foregoing common-mode rejection demodulation method is a very general signal generation and detection methodology and is not limited to photothermal or photoacoustic phenomena, but rather encompasses any and all methodologies that utilize signal modulation. The multiparameter computational method for determining a unique set of thermal and electronic parameters of semiconductor (e.g. Si) wafers, from frequency domain measurements, based on the specifics of signal sensitivity dependence on a given transport parameter across particular regions of the waveform repetition frequency spectrum. And the depth profilometry and roughness elimination method for determining thermal diffusivity profiles of rough samples by processing the experimental data with an approach to roughness based on the concept of the equivalence of random size-parameter distribution of rough layers to white noise.
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