| 摘要 |
PURPOSE: A semiconductor device having a polymetal gate electrode and a method for manufacturing the same are provided to prevent a formation of a silicide layer at a metal/conductive silicon interface, and to exhibit low-resistance and ohmic characteristics. CONSTITUTION: The polymetal gate electrode is formed on a semiconductor substrate(1), such as a silicon substrate through a gate insulating film(2) such as an oxide film. The polymetal gate electrode has a structure, where a conductive silicon film(3), a silicide film(4), a barrier film(5), and a metal film(6) are laminated sequentially from the semiconductor substrate(1). The conductive silicon film(3) adopts, for example, a poly-Si film, while the silicide film(4) adopts, for example, a WSi film. Also, the barrier film(5) is, for example, a WSiN film and the metal film(6) is, for example, a W film.
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