METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a decrease of isolation capacity caused by a thin isolation layer by obviating the necessity of a process for etching a thick gate oxide layer, and to improve the quality of a gate oxide layer formed on a silicon substrate by reducing an exposed silicon substrate in an etch process using a photoresist layer. CONSTITUTION: A silicon nitride layer is formed on the second oxide film formation area. The first oxide film is formed on the first oxide film formation area. The silicon nitride film is eliminated. The second oxide film is formed on the second oxide film formation area.