METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve a surface resistance characteristic of a gate electrode by forming a silicide layer on a flattened gate electrode. CONSTITUTION: An oxide layer is formed on the first conductive type semiconductor substrate(10) by using a CVD(Chemical Vapor Deposition) method. A polysilicon layer is deposited on the oxide layer. The polysilicon layer is polished by performing a CMP(Chemical Mechanical Polishing) process. A gate oxide layer(11a) and a gate electrode(12a) are deposited on a part of the semiconductor substrate(10) by etching the polysilicon layer and the oxide layer. A low density dopant region(13) is formed by implanting the second conductive dopant ions into a surface of the semiconductor substrate(10). A sidewall spacer(14) is formed on both sides of the gate oxide layer(11a) and the gate electrode(12a). A metal layer is deposited on the whole surface of the semiconductor substrate(10). A silicide layer(16a) is formed on the gate electrode(12a) and a source/drain region(15).