| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory element which is increased in immunity to external noise and has floating body effect removed. SOLUTION: A memory element is equipped with a semiconductor substrate, bit lines which are embedded adjacently to the top surface of the semiconductor substrate and arrayed in parallel, word lines which are formed on the semiconductor substrate while insulated from and crossing the bit lines, and vertical access transistors which are formed in unit memory cell areas where the bit lines and word lines cross each other and have 1st source/drain areas, channel areas, and 2nd source/drain areas vertically on the bit lines across a gate insulating film along part, of the side wall of the word lines; and body areas including the channel areas of the access transistors are mutually connected together into one body. |
