发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures improved line edge roughness and suppressed occurrence of development defects in the production of a semiconductor device. SOLUTION: The positive type photoresist composition contains a resin containing specified repeating structural units and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiated with active light or radiation.
申请公布号 JP2002031890(A) 申请公布日期 2002.01.31
申请号 JP20000215574 申请日期 2000.07.17
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO
分类号 G03F7/039;C08F16/12;C08F16/36;C08F20/10;C08F28/04;C08F32/00;C08K5/00;C08K5/16;C08L45/00;C08L101/00;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址