| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which can be manufactured easily at a low cost and is high in luminous output. SOLUTION: This light emitting diode has an n-type GaAs substrate 1, an AlGaInP quantum well light emitting layer 4 formed on the substrate 1 by epitaxial growth, and a Zn-GaP window layer 6. The diode is also provided with an n-type multilayered film 3 and a p-type multilayered film 5 which are formed adjacently to the light emitting layer 4 on both sides of the layer 4 and composed of two or more kinds of transparent AlGaInP-based materials having different AlP compositions. Each of the films 3 and 5 has a function of reflecting the light emitted from the light emitting layer 4 with optical path lengths which are substantially integral multiples of the 1/4 of the wavelength of the light emitted from the layer 4 and the reflectance of the n-type multilayered film 3 is made larger than that of the p-type multilayer film 5. Therefore, the light emitted from the light emitting layer 4 is amplified by the photon recycling action caused by the light emitting layer 4 and multilayered films 3 and 5 and discharged to the multilayered film 5 side by leakage. |
