| 摘要 |
PROBLEM TO BE SOLVED: To establish a reference signal for a memory cell of a MRAM array having high reliability. SOLUTION: This device is a magnetic random access memory(MRAM) device (100). The device (100) generates a reference signal which can be used for deciding a resistance state of each memory cell in an array independently of fluctuation of a resistance value caused by the other factors such as errors in manufacturing, temperature gradient, electromagnetic interference, and secular change.
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