| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu-CVD system capable of attaining the high yield of the product by effectively preventing the deposition of a copper thin film in the inside face, e.g. of piping in contact with a gaseous starting material in a Cu-CVD system, film peeling thereby and the generation of particles and attaining the suppression of the variation of the atmosphere and the stabilization of the process by the stable introduction of a gaseous starting material into a reaction chamber. SOLUTION: In a Cu-CVD system in which a gaseous starting material obtained by using an organic copper complex as a liquid as the raw material and vaporizing the organic copper complex by a vaporizer is introduced into a reaction chamber located on the lower stream side than the vaporizer and is deposited on a substrate, at least a part of the inside face part in contact with the gaseous starting material in a member composing the Cu-CVD system arranged on the lower stream side of the vaporizer is formed of an Al-Mg alloy or a pure aluminum alloy, and more preferably, the part formed of the Al-Mg alloy or pure aluminum alloy is formed into a polished face smoother than the surface roughness of 6.3μmRy.
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