Semiconductor device and production method thereof

摘要

A semiconductor device that makes it possible to restrain the increase of the junction capacitance and others while preventing the punch-through and others accompanying the scale reduction, and a production method thereof are obtained. The semiconductor device includes source and drain regions of first conductivity type disposed to sandwich a channel region, and a pair of pocket injection regions of second conductivity type that cover only a neighborhood of side surface parts of the source and drain regions on the channel region side and respectively form a junction only between the neighborhood of the side surface parts and the pocket injection regions.