首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
IMPROVED BUFFER FOR GROWTH OF GaN ON SAPPHIRE
摘要
<p>A GaN based three layer buffer (11) on a sapphire substrate (101) provides a template for growth of a high quality I GaN layer (105) as a substrate for growth of a Nitride based LED.</p>
申请公布号
WO2002009199(A1)
申请公布日期
2002.01.31
申请号
US2001023330
申请日期
2001.07.25
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
地址
您可能感兴趣的专利
METHOD FOR DETECTING AND QUANTIFYING ADENOVIRUS
CONDITIONAL ACCESS AND SECURITY FOR VIDEO ON-DEMAND SYSTEMS
METHODS AND SYSTEMS FOR MIRRORED DISK ARRAYS
Vorrichtung zum Auslösen des Schulterblattknochens aus einer Tierschulter
SELECTIVE SPOOFER AND METHOD OF PERFORMING SELECTIVE SPOOFING
FINAL DRIVE FOR A OFFSET AXLE
PRIVACY FOR MOBILE TERMINAL IN TELECOMMUNICATIONS NETWORK
FASTENING METHOD AND FASTENING APPARATUS FOR PAPER ROLLS
SYSTEM AND METHOD FOR ASSESSING THE SECURITY POSTURE OF A NETWORK USING GOAL ORIENTED FUZZY LOGIC DECISION RULES
METHOD AND COMPOSITIONS FOR TREATING HEPATOCELLULAR CANCER
USE OF RAS INHIBITORS OF INHIBITING MUSCLE ATROPHY
APPARATUS AND METHOD FOR SOCCER TRAINING AND PRACTICE
Dual interface card and socket
Method and apparatus for an anti-spin regulation (ASR) for a vehicle
Slimming device
Process for the production of soap from neutral fats
Recording medium and information processing device for managing read-in information
Colored building boards, manufacturing methods thereof
Linear compressor
FLEXIBLE CORRUGATED HOSE AND METHOD AND TOOL FOR REDUCING NOISE THERIN