| 摘要 |
PURPOSE: To improve the performance of each element by making the formation of CMOSFET-constituted LSI, etc., easier and increasing channel currents by improving the mobility of electrons and holes. CONSTITUTION: A semiconductor device is provided with a substrate (8), an insulating layer (7) formed on the substrate (8), and laminated regions respectively containing first Si layers (3 and 6), SiGe layers (2 and 5), and second Si layers (1 and 4) successively formed upon the insulating layer (7) and the surface-side second Si layers (1 and 4) and SiGe layers (2 and 5) have strains respectively caused by the lattice constant differences between the Si layers (1 and 4) and SiGe layers (2 and 5) in the laminated regions. In the laminated regions, in addition, an n-MOSFET (17) and a p-MOSFET (18) are respectively formed and the MOSFET (17) has a surface channel using the strained second Si layer (1) as a channel. The p-type MOSFET (18) has a double channel of a buried channel using the strained SiGe layer (5) as a channel and a surface channel suing the second Si layer (4) as a channel.
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