发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a cycle time can be shortened by increasing operation speed of address access. SOLUTION: A 1st address decoder 2 and a 1st refresh address decoder 5 decode respectively an external address Xn supplied from the outside of a semiconductor memory and a refresh address RXn used for refresh in the semiconductor memory. A multiplexer 8 selects a decoding signal XnDm of an external address side or a decoding signal XnRm of a refresh address side so that refresh operation and Read/Write operation are performed continuously in one memory cycle based on an external address transmitting signal EXTR and a refresh address transmitting signal RFTR, and outputs it as a decoding signal XnMm. A word driver 10 activates a word line WLmq by decoding decoding signals XnMm, XpMq selected by the multiplexer 8 or the like.
申请公布号 JP2002032986(A) 申请公布日期 2002.01.31
申请号 JP20010055202 申请日期 2001.02.28
申请人 NEC CORP 发明人 TAKAHASHI HIROYUKI;INABA HIDEO;SONODA MASATOSHI;KATO YOSHIYUKI;NAKAGAWA ATSUSHI
分类号 G11C11/403;G11C11/401;G11C11/406;G11C11/407;G11C11/408;G11C29/04 主分类号 G11C11/403
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