| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which is made at a high density without having junctions or through-holes, compact and superior in reliability. SOLUTION: The semiconductor device is composed of an IC chip 1, a capacitor 2, a filter 3, an insulation chip holder 4 for holding these circuit components 1, 2, 3 together, and a circuit pattern 5 which is electrocast on the holder 4 surface and electrically connected to terminals of the circuit components 1, 2, 3. Metal posts 1a, 2a, 3a are electrocast respectively to the terminals of the circuit components 1, 2, 3 and connected with the circuit pattern 5. The manufacturing method comprises provisionally mounting the circuit components having the metal posts electrocast to the terminals on a base board, sealing the components with an insulation resin, polishing the resin to expose the metal posts on the surface, and electrocasting required circuit pattern between the exposed metal posts. |
