| 摘要 |
PROBLEM TO BE SOLVED: To provide a method or peeling off silicon-containing two-layer resist, by which a two-layer resist composed of a first resist layer applied to a substrate and containing an organic polymeric compound and a second resist layer applied to the first resist layer and containing photosensitive silicon can be peeled off while the occurrence of defects on a wafer is reduced significantly at peeling off the resist for reworking, etc., after the second resist layer has been patterned. SOLUTION: In the method by which the first and second layers of the two- layer resist are peeled off, after the two-layer resist has been formed by applying the first resist layer containing the organic polymeric compound to the substrate and forming the second photosensitive positive resist layer on the first resist layer, and the second resist layer is patterned through exposure and development, a step of irradiating the whole surface of the substrate which carries the pattern formed on the second resist layer through exposure and development, a step of performing wet peeling off on the second resist layer by using an alkaline aqueous solution, and a step of ashing the first resist layer by using an oxygen gas or mixed gas containing oxygen are performed. |
