| 摘要 |
A photovoltaic conversion device having a device structure which enables recombination loss of carriers at the surface to be reduced greatly and which thereby permits Ge to be used as the material suitable for TPV power generation application, and permits a back-face electrode type to be adopted as the electrode structure. This photovoltaic conversion device is comprised of a Ge substrate, a p-type semiconductor layer and a n-type semiconductor layer provided independently of each other on the back-face of the Ge substrate, a positive electrode and a negative electrode provided on the back-face side of the Ge substrate and connected to the p-type semiconductor layer and n-type semiconductor layer, respectively, and a protective film provided on the front face side of the Ge substrate. Hydrogen or halogen is contained in the interface between the Ge substrate and the protective film, or a semiconductor layer with impurity concentration higher than the Ge substrate is provided between the Ge substrate and the protective film.
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