发明名称 Voltage raising circuit for semiconductor memory
摘要 A voltage raising circuit of a semiconductor memory includes a compensating circuit. The compensating circuit has a negative dependency on a source voltage for controlling a variation of a raised voltage caused by a variation of the source voltage, and a positive dependency on temperature for controlling a variation of the raised voltage caused by a variation of the temperature.
申请公布号 US2002012277(A1) 申请公布日期 2002.01.31
申请号 US20000531499 申请日期 2000.03.21
申请人 EINAGA YUICHI 发明人 EINAGA YUICHI
分类号 G11C16/06;G11C5/14;(IPC1-7):G11C7/00 主分类号 G11C16/06
代理机构 代理人
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