发明名称 |
Electronic device and method for producing the same |
摘要 |
A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion etching with a chlorine-based gas on the base film; etching the thin film by a reactive ion etching with a gas containing the chlorine-based gas; and etching the base film exposed by the etched thin film by a reactive ion etching with a gas containing the fluorine-based gas.
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申请公布号 |
US2002011760(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US20010779213 |
申请日期 |
2001.02.08 |
申请人 |
KOSHIDO YOSHIHIRO |
发明人 |
KOSHIDO YOSHIHIRO |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H03H3/08;(IPC1-7):B44C1/22;C23F1/00;H01L41/04 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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