SCHOTTKY DIODE HAVING INCREASED ACTIVE SURFACE AREA WITH IMPROVED REVERSE BIAS CHARACTERISTICS AND METHOD OF FABRICATION

摘要

A Schottky diode comprises a semiconductor body (10) of one conductivity type, the semiconductor body having a grooved surface, a metal layer (32) on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with a grooved surface (12) being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions (30) at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current.