| 摘要 |
<p>High quality epitaxial layers (26) of oxide materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafers. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. The oxyde materials may be piezoelectric, ferroelectric, pyroelectric, ferromagnetic, magnetorensitive, or supurconductive materials, preferably of perovskite type.</p> |
