发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce current consumption of transistors during stand-by in a semiconductor integrated circuit device which has transistors and operates at a low voltage without increasing the layout area, thereby improving the driving power of a transistor during operating. SOLUTION: A transistor in a semiconductor integrated circuit is fed with at least either a first power voltage or second power voltage lower than the first voltage. During operating of the transistor, the threshold voltage of the transistor is lowered to improve its driving power and its operating speed. A substrate voltage is set between the first and second power voltages and hence a booster circuit for generating a high voltage or a pumping circuit for generating a negative voltage, etc., are not needed. As the result the layout area can be reduced.
申请公布号 JP2002033451(A) 申请公布日期 2002.01.31
申请号 JP20000214572 申请日期 2000.07.14
申请人 FUJITSU LTD 发明人 KITAMOTO AYAKO
分类号 G11C11/408;G11C5/14;H01L21/761;H01L21/822;H01L21/8238;H01L21/8242;H01L27/04;H01L27/092;H01L27/108;H03K19/00 主分类号 G11C11/408
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