| 摘要 |
PROBLEM TO BE SOLVED: To improve the in-plane uniformity of a substrate by controlling the temperature of heat treatment which includes the heat radiation from the substrate in the course of heat treatment. SOLUTION: After a temperature dropαfrom the set temperature of a wafer, caused by the floating state of the wafer from a heating plate and a temperature dropβcaused by heat radiation when a bare wafer is used are found, values qB and q1 of heat flows discharged from the bare wafer and wafer are found by means of a heat flow meter. Then the temperature drop errorΔβof the temperature dropβis calculated, based on the values qB and q1, and the sum total of the temperature drops is decided by adding an errorΔβto the temperature dropsαandβ. Then the temperature of the heat treatment is controlled by using the temperature, calculated by adding the sum total of the temperature drops to the set temperature as a target temperature.
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