| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT liquid crystal display device in which the resistance of the source region and the drain region of a transistor is not increased even when a polycrystal silicon film is made thin and in which a transistor characteristic is not lowered. SOLUTION: In the TFT liquid crystal display device and its manufacturing method, the film thickness of a channel facing a gate electrode has a structure which is thinner than the film thickness of a source electrode and a drain electrode. The manufacturing method for the liquid crystal display device is provided with a process in which a first semiconductor layer is formed, a process in which a part of the first semiconductor layer is etched and a process in which a second semiconductor layer covering the first semiconductor layer is formed. When a part of the semiconductor layer is etched up to its halfway, a difference can be formed in its film thickness.
|
