发明名称 VACUUM FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a vacuum film deposition system by which the thickness of a film deposited on a substrate can be uniformized and a defect-free thin film can be deposited by preventing arc discharge. SOLUTION: The vacuum film deposition system 20 is constituted so that a ground body 9 is arranged on the inside of a substrate holder 6 holding a substrate 8 and a plasma generation electrode 5 is arranged on the inside of the ground body 9. The plasma generation electrode 5 can supply electric power for exciting or ionizing the raw material for a film evaporated by an evaporation source 17 into a vacuum chamber 1. Moreover, both the plasma generation electrode 5 having a first opening and the ground body 9 having a second opening are rotated relative to the substrate holder 6. The substrate 8 is made to face, only during a fixed length of time when the electrode 5 and the ground body 9 take a fixed rotation angle with respect to the substrate holder 6, the plasma generation space inside the plasma generation electrode 5 through the first opening of the electrode 5 and the second opening of the ground body 9.
申请公布号 JP2002030427(A) 申请公布日期 2002.01.31
申请号 JP20000212224 申请日期 2000.07.13
申请人 SHIN MEIWA IND CO LTD 发明人 KAMIYA KAZUO
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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