| 摘要 |
Disclosed is a semiconductor device which has: a bipolar transistor comprising a collector region of a second conductivity type formed from the surface of a semiconductor substrate of a first conductivity type, a base region of a first conductivity type formed from the surface of the collector region, and an emitter region of a second conductivity type formed from the surface of the base region; a collector extraction region that is separated by an insulating layer and is formed in the collector region except the base region; a concave portion in the collector extraction region that is formed up to a depth where the collector region has a peak concentration in impurity distribution; and a collector extraction electrode that is connected with the collector region to extract ohmic-connecting to the bottom of the concave portion.
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