| 摘要 |
The method of manufacturing a non-volatile semiconductor memory device comprises a step of providing a first ion implantation on the principal surface of a silicon substrate in a manner to cover a groove to form a first impurity region on the principal surface. Next, a step of providing a second ion implantation to cover the groove to form a second impurity region on the principal surface that overlaps the first impurity region at the groove and electrically connects the second source/drain region and the third source/drain region by the first impurity region. In short, the impurity region at the groove is formed by a twice ion implantation of the first and second ion implantations.
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