MULTI WAVELENGTH SURFACE EMITTING LASER AND METHOD OF MAKING THE SAME

摘要

PURPOSE: A multi wavelength surface emitting laser is provided to reduce an optical arrangement error and have a structure directed formed on a single substrate so as to be easy to make. CONSTITUTION: The first surface emitting laser comprises the first lower reflector layer(41), the first active layer(43) the first upper reflector layer(45) sequentially formed on a substrate(30). The first lower reflector layer(41) is a distributed bragg reflector that different impurity semiconductor layers having different reflective indexes are stacked in turn so as to form several-ten or several-hundred pairs. The first upper reflector layer(45) is a distributed bragg reflector that different doped semiconductor layers having different reflective indexes and opposite conductive type to the first lower reflector layer(41) are stacked in turn so as to form several-ten or several-hundred pairs. The first active layer(43) is a region where there are recombined holes and electrons generated from the first upper and lower reflector layers(45,41) when current is applied to the first upper electrode(47) and a lower electrode(35). The first high-resistance portion(46) is formed in a region of the upper reflector layer(45) except for a lower side of the first window(47a). The second surface emitting laser comprises the second lower reflector layer(51), the second active layer(53) the second upper reflector layer(55) sequentially formed on a substrate(30). The second lower reflector layer(51) is a distributed bragg reflector that different impurity semiconductor layers having different reflective indexes are stacked in turn so as to form several-ten or several-hundred pairs. The second upper reflector layer(55) is a distributed bragg reflector that different impurity semiconductor layers having different reflective indexes and opposite conductive type to the second lower reflector layer(51) are stacked in turn so as to form several-ten or several-hundred pairs. The second active layer(53) is a region where there are recombined holes and electrons generated from the second upper and lower reflector layers(55,51) when current is applied to the second upper electrode(57) and the lower electrode(35). The second high-resistance portion(56) is formed in a region of the upper reflector layer(55) except for a lower side of the second window(57a).