| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a charge accumulation electrode which secures inter-cell spacing and prevents bridging. SOLUTION: This method includes a step for forming a 1st thin film 22 after a contact is formed on a polyoxide film 21 on a semiconductor substrate; a step for forming a core oxide film 23 and a reverse reflecting coat film 24; a step for etching the reverse reflecting coat film, core oxide film, and 1st thin film, forming a pattern for cylinder manufacturing, and forming a 2nd thin film 25 entirely thereupon; a step for forming a tungsten silicide film 26 on the 2nd thin film; a step for etching the tungsten silicide film and 2nd thin film in blanket and forming the internal and external walls of a cylinder; a removal step of the reverse reflecting coat film and core oxide film, a step for performing an SMPS process of carrying out grain growth differently between the internal and external walls of the cylinder; and a step for forming a charge accumulation electrode by annealing the inside of the cylinder. |
