发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology for fabricating a high performance opto electronic device using a plastic support. SOLUTION: A first fixed substrate 101 and an element forming substrate 103 of resin are stuck through a first adhesion layer and then a semiconductor element and a light emitting element are formed on the element forming substrate. A second fixed substrate 106 of resin is then stuck onto the light emitting element through a second adhesion layer 107. Subsequently, it is irradiated with YAG laser under that state thus removing the first adhesion layer 102 and separating or stripping the first fixed substrate 101.
申请公布号 JP2002033464(A) 申请公布日期 2002.01.31
申请号 JP20000216690 申请日期 2000.07.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU
分类号 G09F9/30;H01L21/02;H01L21/336;H01L27/08;H01L27/12;H01L27/32;H01L29/786 主分类号 G09F9/30
代理机构 代理人
主权项
地址