| 摘要 |
PROBLEM TO BE SOLVED: To provide a new ester compund that can give a polymer compound used as a base resin for a resist material that has a high sensitivity to a high- energy radiation and excellent sensitivity, resolution, and etching resistance and is therefore useful for elaborate processing using electron beams or far- ultraviolet radiation and especially can facilitate the formation of a fine pattern vertical to the substrate because of its low absorptivity at the exposure wavelength of ArF eximer lasers or KrF excimer lasers. SOLUTION: The ester compound is represented by formula I (wherein R1 is hydrogen, methyl, or CH2CO2R3; R2 is hydrogen, methyl or CO2R3; R3 is a 1-15C straight chain, branched, or cyclic alkyl; k is 0 or 1; Z is a divalent 2-20C optionally hetero-atom-containing hydrocarbon group that forms a monocyclic or bridged ring together with the carbon atoms bonded thereto; m is 0 or 1; and n is 0, 1, 2, or 3, provided that 2m+n=2 or 3). |
