PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To achieve perfect etching even in a gap in pattern formation by wet etching. SOLUTION: A film to be etched such as a silicon dioxide film 12 is deposited on a substrate 11, a resist 13 is applied and a pattern is formed by lithography. A film 14 of an acyric acid polymer or the like soluble in a hydrofluoric acid etching solution is formed on the resist 13. Since the etching solution is not repelled by the resist and penetrates to the lower part of the fine pattern while dissolving the film 14, the objective fine pattern free from an unetched part even in a narrow region 17 to be etched is formed by wet etching.