发明名称 Hall-effect magnetoelectric converter
摘要 A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.
申请公布号 US2002011841(A1) 申请公布日期 2002.01.31
申请号 US20010893937 申请日期 2001.06.29
申请人 SANKEN ELECTRIC CO., LTD. 发明人 GOTO HIROKAZU;OHTSUKA KOJI;KATO TAKASI;KUMAKURA HIROMICHI
分类号 G01R33/02;G01R15/20;G01R19/00;G01R33/07;H01L43/04;(IPC1-7):G01R33/00;G01R33/06 主分类号 G01R33/02
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