发明名称 |
Hall-effect magnetoelectric converter |
摘要 |
A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.
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申请公布号 |
US2002011841(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US20010893937 |
申请日期 |
2001.06.29 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
GOTO HIROKAZU;OHTSUKA KOJI;KATO TAKASI;KUMAKURA HIROMICHI |
分类号 |
G01R33/02;G01R15/20;G01R19/00;G01R33/07;H01L43/04;(IPC1-7):G01R33/00;G01R33/06 |
主分类号 |
G01R33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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