Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat,申请号DE1992632038T-传众专利搜索

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发明名称	Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat
摘要
申请公布号	DE69232038(T2)	申请公布日期	2002.01.31
申请号	DE1992632038T	申请日期	1992.02.28
申请人	NCR INTERNATIONAL, INC.;HYUNDAI ELECTRONICS AMERICA, MILPITAS;SYMBIOS, INC.	发明人	LEE, STEVEN S.
分类号	H01L21/316;H01L21/32;H01L21/762;(IPC1-7):H01L21/76	主分类号	H01L21/316
代理机构		代理人
主权项
地址

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