MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide an etching method for a compound semiconductor, by which an embedded re-grown interface having few crystal defects is realized. SOLUTION: Wet etching by the mixed liquid of hydrobromic acid and bromine and water within a range of hydrobromic-acid concentration of 0.50±0.25 mol/l and bromine concentration of 0.02±0.01 mol/l is used for removing the damaged layer of a mesa which is formed through dry etching.