| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a pattern inspection method for electron beam lithography and an electron beam lithography method which are capable of automatically detecting the points where a doughnut problem, a leaf problem and an aspect problem arise and exactly transferring patterns without formation of burrs. SOLUTION: The pattern inspection method for electron beam lithography for detecting the defect regions generated in the mask for electron beam lithography is provided. The defect regions of the pattern shapes formed on a mask are extracted by comparing design pattern data D1 for transfer and data D2 of the pattern shapes of the mask actually exposed and formed in accordance with the pattern data D1.</p> |
