| 发明名称 |
SLURRY FOR CMP, METHOD FOR PRODUCING THE SAME AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize W-CMP with low erosion and high overpolishing margin. SOLUTION: A W film 3 is polished with CMP technique, a slurry including thermally fused particles of PMMA 1 (organic particles) and manganese dioxide 2 (inorganic particles) is used as an abrasive.</p> |
| 申请公布号 |
JP2002030271(A) |
申请公布日期 |
2002.01.31 |
| 申请号 |
JP20000214510 |
申请日期 |
2000.07.14 |
| 申请人 |
TOSHIBA CORP |
发明人 |
MATSUI YUKITERU;MINAMI FUKUGAKU;YANO HIROYUKI;FUKUSHIMA MASARU |
| 分类号 |
B24B37/00;C09K3/14;C09K13/00;C11D3/14;C11D11/00;H01L21/304;H01L21/306;H01L21/321;(IPC1-7):C09K3/14 |
主分类号 |
B24B37/00 |
| 代理机构 |
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