METHOD FOR FORMING CONDUCTIVE CONTACT BODY OF INTEGRATED CIRCUIT ELEMENT USING DUMMY INSULATING LAYER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a conductive contact body for preventing electrical short-circuiting from being generated and a contact hole from being opened, and further securing an error alignment margin in a photoetching process to the high integration of a semiconductor device. SOLUTION: A number of lines that use a dummy insulating layer and are mutually isolated are included, and the dummy insulating layer is formed between portions that are selected primarily from the lines that are mutually isolated. An interlayer insulating layer is formed between one portion of the mutually isolated lines that are selected primarily, and one portion that is secondarily selected from other lines that are mutually isolated. The interlayer insulating layer has etching rate lower than the dummy insulating layer to specific etching liquid. The dummy insulating layer is etched by the specific etching liquid to remove at least one portion of the dummy insulating layer between portions that are selected primarily from the mutually isolated lines. Between portions that are selected primarily of the mutually isolated lines where at least one portion of the dummy insulating layer is removed, a conductive layer is formed, and is electrically connected to an integrated circuit between portions that are primarily selected of the mutually isolated lines.