发明名称 THIN FILM MEASURING APPARATUS AND METHOD AND THIN FILM FORMATION SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To measure a thin film on site and in real time with very high accuracy which is formed on the surface of each base inside a thin film formation furnace. SOLUTION: A thin film formation system 10 for forming a thin film S1 on the surface of each of thin film bases 24 and 24 arranged within the closed thin film formation furnace 20 has a measuring portion 30 provided in a portion communicating with the furnace 20. The measuring portion 30 has a thin film formation sample base 31 to which a thin film material flowing therein from the furnace 20 adheres. An X-ray incident window 32 and an X-ray exit window 33 are provided in the sidewalls of the measuring portion 30. A thin film measuring apparatus 40 installed outside the furnace 20 applies X-rays to the base 31 of the measuring portion 30 through the X-ray incident window 32. The X-rays reflected by the base 31 are detected through the X-ray exit window 33.</p>
申请公布号 JP2002031523(A) 申请公布日期 2002.01.31
申请号 JP20010117541 申请日期 2001.04.16
申请人 RIGAKU CORP 发明人 HAYASHI SEIICHI;HARADA JINPEI
分类号 G01B15/02;C23C14/52;C23C14/54;G01N23/207;G21K1/06;(IPC1-7):G01B15/02 主分类号 G01B15/02
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