High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
申请公布号
WO0209160(A2)
申请公布日期
2002.01.31
申请号
WO2001US22747
申请日期
2001.07.19
申请人
MOTOROLA, INC.
发明人
FINDER, JEFFREY, M.;EISENBEISER, KURT;RAMDANI, JAMAL;DROOPAD, RAVINDRANATH;OOMS, WILLIAM, JAY