| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which can be improved in luminous efficiency without increasing its manufacturing cost. SOLUTION: This light emitting diode has a GaAs substrate 1, AlGaInP light emitting layers formed on the substrate 1, a pair of electrodes 9 and 10 which are formed so as to hold the substrate 1 and light emitting layers between them and to supply an electric current to the light emitting layers, and a light emitting port 11 which is formed on the light emitting layer side to emit the light emitted from the light emitting layers. In the diode, two or more light emitting layers 4 and 5 having different energy band gaps are formed. |
