| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide various gate electrode arrangements by using one mask, a shifter edge type phase shift mask for instance, and to efficiently develop, manufacture a prototype and manufacture and FET and an IC at a low cost. SOLUTION: A phase shifter 23 is formed on the entire exposure region of a transparent substrate 22, shifter edges 24 are arrayed with a fixed pitch p and the shifter edge type phase shift mask 21 is formed. By using the phase shift mask 21, openings are made with the fixed pitch on a photoresist and the openings are filled with a separate photoresist. Then, only required opening are exposed, by using a normal mask and a desired opening pattern is obtained.</p> |
