| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can reduce nonuniformity in thickness, without blocking the spread of an insulating layer in a process for applying the insulating layer for planarization treatment. SOLUTION: This semiconductor device has a first wiring conductive layer 21 that is formed on a semiconductor substrate 1; the first insulating layer 31 that is formed while covering the first wiring conductive layer 21; the inorganic second insulating layer 32 that is formed on the side of a stage part 31A that is generated on the surface of the first insulating layer 31 on the first insulating layer 31, so that the stage part 31A can be flattened; the third insulating layer 33 that is formed on the second insulating layer 32; and a second wiring conductive layer 22 that is formed on the third insulating layer 33. In this case, a slit SL is formed in the first wiring conductive layer 21, and the part between the slits SL is electrically connected by a second wiring conductive layer 22.
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