| 摘要 |
PURPOSE: A test pattern for measuring a leakage current is provided to reduce an occupying area by eliminating the need for a lot of array patterns, and to precisely perform a measurement regarding the local short-circuit leakage current of a main chip. CONSTITUTION: When a current leakage path to the first and second regions according to the local short-circuit in the main chip is expected, the third and fourth regions which are the same as the first and second regions, are formed in the periphery of the main chip. A power supply voltage(Vcc) is connected to the third region by the first pattern. The leakage current flowing from the third region to the fourth region is applied to a bipolar transistor(Q1), and the leakage current value amplified from the bipolar transistor is measured by using measurement equipment so that the second pattern for obtaining a real leakage current value is formed.
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