| 发明名称 |
Process to reduce the surface recombination rate of silicon |
| 摘要 |
Redn. of the surface recombination rate of Si wafer is effected by (i) cleaning and drying of the Si surface; and (ii) application of a lacquer at below 100 degrees C, followed by drying to give an elec. non-conducting layer. |
| 申请公布号 |
EP0706207(B1) |
申请公布日期 |
2002.01.30 |
| 申请号 |
EP19950113831 |
申请日期 |
1995.09.04 |
| 申请人 |
ATMEL GERMANY GMBH |
发明人 |
ARNDT, WOLFGANG;GRAFF, KLAUS, DR.;HAMBERGER, ALFONS;HEIM, PETRA |
| 分类号 |
C30B33/00;H01L21/312;H01L21/316;H01L23/31;(IPC1-7):H01L21/312 |
主分类号 |
C30B33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
