| 发明名称 |
Surface treatment solution for polysilicon film and method of treating the surface of polysilicon film using the same |
| 摘要 |
<p>An inexpensive surface treatment solution that can selectively reduce the average roughness (Ra) of the surface of a polysilicon film formed by crystallization on an insulating substrate such as one made from glass with a laser annealing process. The surface treatment solution essentially comprises 0.01 to 0.5 wt% of hydrofluoric acid or 0.5 to 5 wt% of ammonium fluoride, 50.0 to 80.0 wt% of nitric acid and water. <IMAGE></p> |
| 申请公布号 |
EP1176633(A2) |
申请公布日期 |
2002.01.30 |
| 申请号 |
EP20010306297 |
申请日期 |
2001.07.23 |
| 申请人 |
KANTO KAGAKU KABUSHIKI KAISHA |
发明人 |
HAYASHI, HIDEKAZU.;KAGEYAMA, KENJI. |
| 分类号 |
C11D7/08;C09K13/04;H01L21/02;H01L21/20;H01L21/304;H01L21/306;H01L21/321;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/321;B08B3/04;B05D5/00;H01L21/302 |
主分类号 |
C11D7/08 |
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