| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce a storage node contact resistance by improving a structure of a semiconductor device. CONSTITUTION: The first plug(207) is formed on an upper portion of a semiconductor substrate(201) by performing a plug formation process. The first interlayer dielectric(205) including dopant ions is formed on the whole surface of the semiconductor substrate(201). The dopant ions are doped on the first plug(207) by performing a thermal process. A bit line is formed on the first interlayer dielectric(205) between the first plugs(207). The second interlayer dielectric(208) is formed on an upper portion of the first interlayer dielectric(205). A contact hole is formed by etching selectively the second interlayer dielectric(208), the first interlayer dielectric(205), and the first plug(207). The second plug(213a) is formed within the contact hole.
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