| 摘要 |
PURPOSE: A semiconductor memory device is provided, which can reduce a layout area by removing two transistors comprised to perform a scan function in each memory cell of a memory cell array. CONSTITUTION: The semiconductor memory device comprises a memory cell array(30), a row decoder(12), a scan decoder(14), a data input/output gate(16), a precharge circuit(18), a scan data output circuit(20), a word line control circuit(24), inverters(I1,I2,I4) and a NOR gate(NOR3). The memory device is constituted by removing two transistors included in each memory cell in the memory cell array of the conventional semiconductor memory device, and also by removing a precharge circuit to precharge a scan line. The scan data output circuit generates data as scan data(S1,S2,...) being output from an inverted bit line(BLB) in response to a scan clock signal(SCK).
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