发明名称 |
PAD CONDITIONING METHOD OF CMP PROCESS |
摘要 |
PURPOSE: A pad conditioning method of a CMP(Chemical Mechanical Polishing) process is provided to measure an outer thickness and an inner thickness of a polishing pad within a short time. CONSTITUTION: An outer thickness(OD) and an inner thickness(ID) of a polishing pad(110) are measured by using a diameter scan method. The outer thickness(OD) of the polishing pad is compared with the inner thickness(ID) of the polishing pad. A conditioner is moved according to a difference between the outer thickness(OD) and the inner thickness(ID). A measurement apparatus(120) for measuring a profile of the polishing pad(110) is formed with a guide rail(122), a sensor(124), and a drive portion(126). The guide rail(122) is moved to an upper portion of the polishing pad(110). The sensor(124) is used for measuring the thickness of the polishing pad(110). The drive portion(126) provides a driving force for moving sensor(124) on the guide rail(122).
|
申请公布号 |
KR20020006977(A) |
申请公布日期 |
2002.01.26 |
申请号 |
KR20000040602 |
申请日期 |
2000.07.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, CHUN GWANG;LEE, YEONG CHUL |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|