THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND ELECTROLUMINESCENCE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which is excellent in both initial characteristics and reliability in manufacturing the thin film transistor, a liquid crystal display device, and an electroluminescence display device. SOLUTION: A thin film transistor is formed, using a gate insulating film having fixed electric charge of 2×1015 cm-3 to 5×1017 cm-3, interface state density of 1×1010 cm-2eV-1 to 7×1012 cm-2eV-1, and an electric field of 6 MVcm-1 to 11 MVcm-1 when a current of 1×10-3 A.cm-2 flows.